Thermal activation of As implanted in bulk Si and separation by implanted oxygen
نویسندگان
چکیده
منابع مشابه
Thermal activation of As implanted in bulk Si and separation by implanted oxygen
We have studied arsenic (As) diffusion and its electrical activation in two different types of silicon substrates: bulk Si and separation by implanted oxygen (SIMOX) wafers. Both substrates were implanted with a dose of 531014 cm−2 As+ at 20 keV. The samples were annealed and physical characterization was performed with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrome...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2004
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1776319